1/4 2011.09 - rev.a super fast recovery diode rf1501ns3s ? series ? dimensions (unit : mm) ? land size figure (unit : mm) ultra fast recovery ? applications general rectification ? features 1)ultra low switching loss 2)high current overload capacity ? structure ? construction silicon epitaxial planer ? absolute maximum ratings (tc=25 c) symbol limits unit v rm 350 v v r 300 v io 20 a tj 150 c tstg - 55 to + 150 c ? electrical characteristics (tj=25 c) symbol min. typ. max. unit forward voltage v f 1.35 1.5 v i r 0.06 10 a trr 22 30 ns thermal resistance rth(j-c) 2.5 c/w average rectified forward current reverse voltage repetitive peak reverse voltage ? taping dimensions (unit : mm) parameter conditions storage temperature junction temperature forward current surge peak i fsm one cycle peak value, tj=25c 100 junction to case reverse recovery time i f =0.5a,i r =1a,irr=0.25i r reverse current parameter a conditions i f =20a v r =300v duty 0.5 direct voltage 60hz half sin wave resistive load at tc=54c 60hz half sin wave, non-repetitive rohm : lpds jeita : to263s manufacture year, week and day rf1501 ns3s data sheet www.rohm.com ? 2011 rohm co., ltd. all rights reserved.
rf1501ns3s 2/4 2011.09 - rev.a 0.001 0.01 0.1 1 10 100 0 500 1000 1500 2000 2500 forward voltage v f (mv) v f -i f characteristics forward current:i f (a) tj=125 c tj=25 c tj=150 c tj=75 c 1 10 100 1000 10000 100000 1000000 0 50 100 150 200 250 300 350 tj=125 c tj=25 c tj=150 c tj=75 c reverse current:i r (na) reverse voltage v r (v) v r -i r characteristics 10 100 1000 0 5 10 15 20 25 30 capacitance between terminals:ct(pf) reverse voltage:v r (v) v r - ct characteristics f=1mhz 1000 1100 1200 1300 1400 v f dispersion map forward voltage:v f (mv) ave:1234mv i f =20a tj=25 c 1 10 100 1000 reverse current:i r (na) i r dispersion map ave:18.2na v r =300v tj=25 c 300 310 320 330 340 350 360 370 380 390 400 ave:356pf capacitance between terminals:ct(pf) ct dispersion map f=1mhz v r =0v tj=25 c www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
rf1501ns3s 3/4 2011.09 - rev.a 100 150 200 250 300 350 400 ave:269a 0 5 10 15 20 25 30 ave:16.6ns tj=25 c i f =0.5a i r =1a irr=0.25 i r n=10pcs trr dispersion map reverse recovery time:trr(ns) 1 10 100 1000 1 10 100 peak surge forward current:i fsm (a) number of cycles i fsm - cycle characteristics i fsm dispersion map its ability of peak surge forward current:i fsm (a) 8.3ms i fsm 1cyc. 10 100 1000 1 10 100 peak surge forward current:i fsm (a) time:t(ms) i fsm - t characteristics 0 5 10 15 20 25 30 c=200pf r=0 c=100pf r=1.5k no break at 30kv no break at 30kv electrostatic discharge test esd(kv) esd dispersion map 0.1 1 10 0.001 0.01 0.1 1 10 100 1000 rth(j - c) time:t(s) rth - t characteristics transient thermal impedance:rth ( c /w) www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
rf1501ns3s 4/4 2011.09 - rev.a 0 10 20 30 40 50 60 0 10 20 30 40 d.c. d=0.5 d=0.2 d=0.1 d=0.05 half sin wave d=0.8 average rectified forward current io(a) io - pf characteristics forward power dissipation:pf(w) 0 2 4 6 8 10 12 14 16 18 20 0 30 60 90 120 150 d.c. d=0.5 d=0.2 d=0.1 d=0.05 half sin wave d=0.8 ambient temperature:ta( c) derating curve (io - ta) average rectified forward current:io(a) t tj=150 c d=t/t t v r io v r =350v 0a 0v on glass - epoxy substrate soldering land 2mm 0 5 10 15 20 25 30 35 0 30 60 90 120 150 d.c. d=0.5 d=0.2 d=0.1 d=0.05 half sin wave d=0.8 average rectified forward current:io(a) case temperature:tl( c) derating curve (io - tl) t tj=150 c d=t/t t v r io v r =350v 0a 0v www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
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